A Quasi-Two-Dimensional Model for High-Power RF LDMOS Transistors
نویسندگان
چکیده
منابع مشابه
Design and Characterization of RF-Power LDMOS Transistors
Success is not final, failure is not fatal: it is the courage to continue that counts. III " Investigation of the non-linear input capacitance in LDMOS transistors and its contribution to IMD and phase distortion, " The following papers are related to the work in this thesis but have not been included.
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ژورنال
عنوان ژورنال: IEEE Transactions on Electron Devices
سال: 2011
ISSN: 0018-9383,1557-9646
DOI: 10.1109/ted.2011.2160546